Micron breaks ground on its New York megafab

2026-01-16 · Publisher : Micron Technology · Domain : Industry 4.0 & 5.0

On 16 January 2026, Micron breaks ground on its $100bn memory complex in Clay, New York: up to four fabs, presented as the largest semiconductor site in the US, with production expected in 2030.

### What changes On 16 January 2026, **Micron Technology** officially breaks ground on its memory **megafab** in **Clay**, Onondaga County, New York. Announced in 2022, the project starts construction after years of procedures. ### Key facts - Investment: **$100bn** for a leading-edge memory manufacturing complex. - Up to **four fabs**: Micron presents it as the largest semiconductor facility in the US, with **50,000 jobs** announced in the state. - Production expected from **2030**, ramping throughout the decade. - $500M community investment framework with Empire State Development, including $250M for workforce, education, transportation and housing. - Cornerstone of a roughly **$200bn** US plan (two fabs in Idaho, modernization in Virginia, HBM packaging) targeting **40%** of Micron's DRAM made in the US. ### Why it matters Memory, especially HBM, has become an AI bottleneck. By reshoring production, Micron reduces US dependence on Asia for a critical component. The timeline (production in 2030) is also a reminder of how slow these projects are: from announcement to first wafer takes nearly a decade. ### Takeaway The largest US semiconductor project finally breaks ground, for production at the end of the decade.

Tags : Semi-conducteurs, Relocalisation, États-Unis, Usine